第十一章工艺集成.ppt

集成电路工艺原理 仇志军 zjqiu@fudan.edu.cn 邯郸校区物理楼435室 MOS隔离技术 栅结构及自对准技术 先进CMOS集成工艺 On-Time 2 Year Cycles PR coating and pre-baking, mask alignment exposure, PEB, development and inspection mask8 Ar2 Sputtering etching（SiO2及刻蚀清洗） Strip PR etch Si Strip nitride oxide Wafer cleaning mask2 PR coating and pre-baking, mask alignment exposure, PEB, development and inspection mask3 PR coating and pre-baking, mask alignment exposure, PEB, development and inspection Strip PR sacrificial oxide Wafer cleaning mask4 a-Si etching PR coating and pre-baking, mask alignment exposure, PEB, development and