eetopcn【ISETCAD】Diodeprocessandsimulation.pptxVIP

Diode Process and Devise simulation Diode Process flow Diode process flow Initial Wafer setting N-type wafer=Phos/5e14, Orientation=100 SAC Oxide 200A Pplus implant B/30K/5e12/T7 Pplus drive-in Anneal Temperature=(1100), time=30min, Atmosphere=Mixture, Flow(N2=3l/min, O2=0.5l/min) Echo oxide Strip SAC oxide Target : Simulate Diode forward I-V curve and Diode Vt Start to execute “GENESISe” How to execute GENESIS on Linux or Unix Step 1 : Please type “GENESISe” in the prompt window Step 2 : You can see “GENESIS” window How to execute GENESIS on Window XP You can see “GENESIS” window Execute X-server software (Only Window XP needs this) You can see one additional item (Exceed) GENESIS : Create New Project GENESIS : Save New project name as “Diode” Step 1 Step 2: input project name “Diode” GENESIS flow – Add tools “dios” Step 1: “Right click” on “No Tools” Step 2 : input “Tools Name” and Select DB Tool Step 3 Graphic Editor tool for Process Flow : Ligament Ligament – Edit Ligament flow Step 1: “Right click” on “Dios” icon Ligament – Add Process Header Step 1 Step 2 : The first step for the Project edit Step 3 : You can see “3” items in the left widnow Ligament – Environment setting (1) See next page about these two setting Ligament – Initial condition setting (2) – Gird size Nx=2 repl(cont(maxtrl=7,RefineGradient=-6,RefineMaximum=0,RefineJunction=-7,RefineBoundary=-6)) Mesh refinement RefineGradient RefineMaximum RefineJunction RefineBoundary RefineACInterface RefineBeforeFront RefineAll : Lowest Level in defined region Ligament – Mesh Level (1D) RefineJunction: Level=7 RefineBoundary: Level=6 Level=1 definition = (X_right – X_left) / Nx = (1.0 – 0.0) / 2 = 0.5um Level=1 Zoom In Level=3 Level=4 Level=7 Level=1 : 0.5 um Level=2 : 0.25 um Level=3 : 0.125 um Level=4 : 0.0625 um Level=5 : 0.03125 um Level=6 : 0.0156 um Level=7 : 0.0078 um Level size: Pplus Nsub Ligament – Mesh Level (2D) RefineBoundary: Level=6 RefineJunction: Level=7 Level=1 definit