◆FUJI_Super-J MOS_(eng)_MT5F24760_Jul-21-2011.ppt

Power Supply Unit Efficiency Targets Loss ratio of Power MOSFET Fuji Power MOSFET：Reduction of conduction loss Super-J MOS line-up Fuji Electric Co., Ltd. MT5F24760 Confidential * Fuji Super junction MOSFET“Super-J MOS” 600V series Discrete Device Sect.Discrete IC Technology Dept.Semiconductors Technology Div. Matsumoto Factory Electronic Devices Business Headquarters A.Kitamura Jul./21/2011 Check T.Shimatoh Jul./21/2011 Drawn A.Kitamura Jul./21/2011 Approved Fuji Electric Co., Ltd. (FY)2009 2010 2013 2014 2011 2012 H/V Products Technology Super-JMOS (Super junction-MOSFET) 600V class Planar 6th Gen. SuperFAP-E3S SuperJunction-MOSFET 2nd Gen. SJ-MOSFET Improvement of  “Avalanche, SW loss and SW noise” SiC-MOSFET Research DevelopmentGaN-MOSFET Research Development Development Roadmap of Fuji MOS Gate Devices SJ (Super junction)-MOSFET 500V～900V class SiC MOSFET 600V,1200V L/V Products 3rd Gen. Trench 40～150V class 4th Gen. Trench 40～150V class Planar Super FAP-E3  150~300V class Trench-MOSFET Trade-off improvement of“Fast SW vs. SW loss vs. SW noise” ☆DS SJ-MOS 2nd Gen. Improvement of Ron?A, Avalanche, SW loss and SW noise” ☆MP ☆MP ☆MP ☆MP ☆DS ☆DS ☆MP ☆MP ☆DS 6th Gen. High Speed V-series IGBT 600V,1200V Next Gen. High Speed IGBT 600V,1200V ☆MP ☆MP ☆DS ☆DS By increase of the consumption electricity of the ICT equipment , the high efficiency for the power supply is required. Regulation about the efficiency becomes severe. Efficiency [%] @50% LOAD PFC Rectifier Main CCM-PFC Phase Shift BridgeSynchronous Rectifier Front End PSU　/　2kVA AC115VAC240V ex. DC12V Blocking Standby Fly-back Blocking ex. DC5VSB PFC-IC : FA5502, FA5612 / FA5613MOS: 600V SuperFAP-E3S →600V Super-JMOS (U.D.)Diode 600V SuperLLD3 IC: 800V HVIC Driver (U.D.) FA5760(Curent Resonant) (U.D.)MOS(DC-DC): 600V SuperFAP-G FRED　→600V SJ-MOS(U.D.)　→600V SiC-MOS(U.D.) MOS (Sync. Rectifier) 40V-150V Trench 3G Blade server Disk device Power Supply U