二次谐波具体公式1.3502596.pdfVIP

Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer Ung Hwan Pi, Kee Won Kim, Ji Young Bae, Sung Chul Lee, Young Jin Cho, Kwang Seok Kim, and Sunae Seo Citation: Applied Physics Letters 97, 162507 (2010); doi: 10.1063/1.3502596 View online: /10.1063/1.3502596 View Table of Contents: /content/aip/journal/apl/97/16?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Quaternary memory device fabricated from a single layer Fe film J. Appl. Phys. 111, 07C704 (2012); 10.1063/1.3670973 Monitoring magnetization reversal and perpendicular anisotropy by the extraordinary Hall effect and anisotropic magnetoresistance. J. Appl. Phys. 108, 043924 (2010); 10.1063/1.3475690 Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices Appl. Phys. Lett. 90, 152113 (2007); 10.1063/1.2721144 Influence of spin polarization enhancement layer to rare earth–transition metal thin films for perpendicular tunneling magnetoresistance evaluated by ferromagnetic Hall effect J. Appl. Phys. 99, 08C513 (2006); 10.1063/1.2177420 Perpendicular magnetization reversal, magnetic anisotropy, multistep spin switching, and domain nucleation and expansion in Ga 1 − x Mn x As films J. Appl. Phys. 98, 063904 (2005); 10.1063/1.2043233 This article is copyrighted as indicated in the article. Reuse of AIP content is subject to the terms at: /termsconditions. Downloaded to IP: 14 On: Fri, 14 Nov 2014 13:21:01 APPLIED PHYSICS LETTERS 97, 162507 2010 Tilting of the spin orientation induced by Rashba effect in ferromagnetic metal layer Ung Hwan Pi,a