GaAlAs红外发光二极管1_f噪声研究_包军林.pdfVIP

28 3 V o l. 28 N o. 3 2005 9 Chinese J ournal of Elect ro n Devices Sep . 2005 Study of 1/ f Noise in GaAlAs IREDs BA O J un-l in ZH UA N G Yi -qi D U Le i M A Zhong -f a L I Wei -hua WA N Chang -x ing 1. M icr oelectr onic In t itute X id ian Univ er ity X i an 7 1007 1 China; 2. K ey L ab of M ini try of E ducat ion f or Wid e Band - Gap S emiconductor M aterial and D ev ice X i an 7 1007 1 China Abstract: 1/f no ise in G aA lA s inf rared ray em itt ing dio des ( IR EDs) w as measur ed in a w idely bias range. Exp eriment al resul ts demon st rat e t h at t he magnitu de of 1/f noise is in direct ly proport ional t o the pow er C of the curr entI F at small current sC1 at large currents C2. A model f or 1/f noise in GaA lA s IRED is develop ed and t he r esult s obt ained agr ee w ell w ith ex perimental resul ts . Based o n this model it is dis- cu ssed th at at small curr ent s 1/f noise in G aA lA s inf rared ray emit ting diodes com es fro m tr apping and det rapp ing proces s bet w een bulk defect s and carriers w hile at larg e currents it is due to f luct uat ion s in t he sur face reco mbinat ion v elo cit y indu ced by t he sur face pot ent ial w hich is modulat ed by ox ide t raps near t he sp ace-ch arge r eg io n . T he wo rk done above provides an exp eriment al and t heor et ical b asis f or 1/f noise t o be u sed in ch aract erizing r eliabil it y of G aA lA s IRED s : 1/ ; ; ; Key words f no ise IRED flu ct u ation s ox ide t raps EEACC: 4280S GaAlAs 1/ f 包军林 庄奕琪 杜 磊 马仲发 李伟华 万长兴 ( 71007 1) : G aA lA s ( I RL E D) 1/f