VT4045BP-M34W;中文规格书,Datasheet资料.pdf

VT4045BP Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low V = 0.28 V at I = 5 A F F FEATURES TMBS® TO-220AC • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2011/65/EU • Halogen-free according to IEC 61249-2-21 definition 2 1 TYPICAL APPLICATIONS PIN 1 For use in solar cell junction box as a bypass diode for PIN 2 CASE protection, using DC forward current without reverse bias. MECHANICAL DATA