2SA965-Y(TE6,F,M);中文规格书,Datasheet资料.pdfVIP

2SA965 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA965 Power Amplifier Applications Unit: mm Driver-Stage Amplifier Applications • Complementary to 2SC2235. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −120 V Collector-emitter voltage VCEO −120 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB -80 mA Collector power dissipation PC 900 mW Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC TO-92MOD JEITA ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.)