IS62WV10248DBLL-55TLI;中文规格书,Datasheet资料.pdfVIP

IS62WV10248DALL/BLL IS65WV10248DALL/BLL 1M x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM MAY 2009 FEATURES DESCRIPTION • High-speed access time: 45ns, 55ns The ISSI IS62WV10248DALL/ IS62WV10248DBLL are high-speed, 8M bit static RAMs organized as 1M words • CMOS low power operation by 8 bits. It is fabricated using ISSIs high-performance – 30 mW (typical) operating CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high- – 12 µW (typical) CMOS standby performance and low power consumption devices. • TTL compatible interface levels When CS1 is HIGH (deselected) or when CS2 is LOW (deselected), the device assumes a standby mode at • Single power supply which the power dissipation can be reduced down with – 1.65V--2.2V Vdd (62/65WV10248dALL) CMOS input levels. – 2.4V--3.6V Vdd (62/65WV10248dBLL) Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable • Fully static operation: no clock or refresh (WE) controls both