闪存基本原理（国外英文资料）.docVIP

闪存基本原理（国外英文资料） Flash storage principle The principle of semiconductor storage devices There are a lot of portable storage devices on the market, most of them in semiconductor chips. Using a semiconductor storage medium, the volume can be small enough to carry. Unlike storage devices, such as hard drives, it has no mechanical structure, so it does not fear collisions. No mechanical noise; It USES very little power compared to other storage devices; Reading and writing is also very fast. The main drawback of semiconductor storage devices is the price and capacity. Todays semiconductor storage devices are widely used in a technique called FLASH MEMORY. Literally, flash memory, which is faster than the EPROM. FLASH MEMORY is a non-volatile MEMORY, because the data in the chip wont be lost when it loses power, so it is suitable for the external storage device for the computer. It USES electric brush to write the way, can be written by 100 thousand repetitions, the speed is fast, the power consumption is small. 1. Type NOR FLASH chips We know that the triode conduction and conduction two states, the two states can be used to represent data 0 and 1, so using transistor as a memory cell transistor array can be used as a storage device. FLASH technology is used as a storage unit using special floating gate field effector. The structure of this field tube is very different from the normal field tube. It has two grids, one of which, like a regular grid, is led out of a wire, called a gate of choice. The other is in an enclosed area of silicon dioxide, which is not connected to any part of the earth, and the grid, which is not connected to any part, is called a floating grid. Normally, the floating gate does not have charge, the field effect tube is in the unsupervised state, and the drain level of the field effect tube is high, which represents the data 1. In programming, the drain of the field effector and the selective grid are coupled with high programming voltage, and the