不同形状的电流阻挡层对GaN 基LED 光效的影响 - 发光学报.PDFVIP

第34卷摇 第4期 发摇 光摇 学摇 报 Vol郾34 No郾4 2013年4月 CHINESEJOURNAL OF LUMINESCENCE Apr. ,2013 文章编号:1000鄄7032(2013)04鄄0480鄄05 不同形状的电流阻挡层对 GaN基LED光效的影响 * 曹伟伟,朱彦旭 ,郭伟玲,刘建朋,俞摇 鑫,邓摇 叶,徐摇 晨 (北京工业大学 光电子技术省部共建教育部重点实验室,北京摇 100124) 摘要:电流阻挡层(CBL)可以改善发光二极管(LED)的发光效率和输出光功率,其形状对电流的阻挡作用 有影响。 本文通过等离子体增强化学气相沉积设备(PECVD)在InGaN/ GaN多量子阱外延片上制备了SiO2 薄膜,并腐蚀出不同结构作为电流阻挡层:A组形状与P 电极形状相同,B组为Y形 CBL,C组为点状 CBL。 通过对这3组芯片与常规芯片的对比,发现加入CBL对小功率LED的电压特性影响比较小,并且电流阻挡层 形状与金属电极形状相同时对光效的提高最大,可以提高14.6%。 关摇 键摇 词:发光二极管(LED);电流阻挡层(CBL);光效 中图分类号:TN383.1摇 摇 摇 文献标识码:A摇 摇 摇 DOI:10.3788/ fgx0480 Improving Luminous Efficacy of The GaN鄄based Light鄄emitting Diodes by Using Different Shapes of Current Blocking Layer * CAO Wei鄄wei,ZHU Yan鄄xu ,Guo WEI鄄ling,LIUJian鄄peng,YU Xin,DENG Ye,XU Chen (Key Laboratory of Optoelectionics Technology,Ministry of Education,Beijing University of Technology,Beijing 100124,China) *Corresponding Author,E鄄mail:zhuyx@ Abstract:Current blocking layer (CBL)wasused to improve light output power and luminouseffi鄄 cacy of the LEDs .The structure of CBL can block the current from entering the active region below thetop contact. The shapeof currentblockinglayer impactspropertiesof LEDs,sowefabricatedif鄄 ferent kinds of SiO CBL by plasma enhanced chemical vapor deposition (PECVD)and etched. 2 There are3 shapes in the experiment:Group A has a whole structure of CBL which approximately has a same shape of top metal contact laver,group B isa Y鄄shapedwhich located on top of the up鄄 per confinement,and group Conly hasapoint鄄shaped structureunder the metal pad electrode. Ac鄄 cording to theexperiment,weobtainthatthe