光电双基区晶体管(PDUBAT)物理模型探讨.PDF

8 Vol.29 No. 8 2001 8 ACTA ELECTRONICA SINICA August 2001 (PDUBAT) 郑云光, 张世林, 郭维廉, 李树荣, 沙亚男, 毛陆虹 ( , 300072) : (PDUBAT) , PDUBAT , . : ; : TN364 : A : ( 2001) Discussion on t he Physical Model in Photoelect ric Dual Base Transistor ZHENG Yunguang, ZHANG S ilin, GUO Weilian, LI S urong, SHA Yanan, MAO Lu ong ( College of Electroni c Inf ormati on Engineering, Tianj in University , Tianj i n 300072, China) Abstract : T roug analyzing t e internal current transport in p otoelectric dualbase transistor ( PDUBAT) , t e p ysical mec anism for t e origin of t e negative resistance c aracteristic in t e device as been discussed. In t is paper,we propose t at t e cause for t e negative resistance in PDUBAT is coming from t e feedback effect of t e lateral component of output current of t e verti cal transistor in PDUBAT for t e first time. T is viewpoint as been confirmed by experiment. Key words: p otoelectric dualbase transistor; indirect coupling p otoelectric detector ) , W W! , I 1 b2 b2 E 1 p n p ( 1980 C ungYu Wu C ingYuan Wu 1 1 2 [ 1] ) , I I! ( DUBAT) , C2 C2 , I ∀ I ( ) p n p . 1991 C 1 b2 1 1 2 [ 2] , DUBAT , . , IE 1 ∀