理想SOMOS的电容特性-电子器件.PDFVIP

第37 卷 第5期 电 子 器 件 Vol.37摇 No.5 2014年10 月 ChineseJournal of Electron Devices Oct.2014 Capacitance鄄Voltage Characteristics of Ideal SOMOS Structures* 1,2 1,2 * 1,2 1,2 LI Man ,GUO Yufeng ,YAOJiaofei ,ZOU Yang (1.JiangsuProvince Engineering Lab of RF integration andMicropackage,Nanjing 210023,China; 2.College of Electronic Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023,China) Abstract:Three鄄dimensional integration is of great interest to IC technology currently. Low and high frequency capacitance鄄voltagecharacteristicsoftheSOMOSstructure,thebasicstackstructurepropertiesin3Dintegration,are investigated.An analytical model is proposed and verified using the two鄄dimensional semiconductor simulator SILVACO.The results show that both are in good agreement.Based on the model,the physical mechanism of low and high frequency capacitance鄄voltage characteristics under various bias are researched.This work contributes to the non鄄destroyed characterization of the3D stack structure in3D integrations. Key words:three鄄dimensional integration;SOMOS;capacitance鄄voltage characteristics;characterization EEACC:2560;2130摇 摇 摇 摇 doi:10.3969/j.issn.1005-9490.2014.05.005 理想SOMOS 的电容特性* 1,2 1,2 * 1,2 1,2 李摇 曼 ,郭宇锋 ,姚佳飞 ,邹摇 杨 (1.江苏省射频集成与微组装工程实验室,南京210023;2.南京邮电大学电子科学与工程学院,南京210023) 摘摇 要:三维集成是当前集成电路技术研究的热点之一,就三维集成的基本结构———SOMOS结构的低频和高频电容-电压 特性进行了研究,建立了解析模型,并利用二维半导体器件仿真软件SILVACO对模型进行了验证,二者吻合良好。 而后借助 该模型,对不同的偏置条件下的低频和高频电容—电压特性的物理机理进行了探讨,证实了通过电容-电压特性法对三维堆 叠结构进行无损表征的可行性。 关键词:三维集成;SOMOS;电容—电压特性;表征; 中图分类号:TN301;TN492摇 摇 摇 摇 文献标识码:A摇 摇 摇 摇 文章编号:1005-9490(2014)05-0822-04 摇 摇 三维集成是克服“More Moore冶应用、提高封装 法虽然直观,但