李乐萍-258-259-C27.docVIP

258 C H A P T E R 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor TEST YOUR UNDERSTANDING TYU6.2 The silicon impurity doping concentration in an aluminum-silicon dioxide-silicon MOS structure is .Using the parameters in Example 6.3, determine the metal-semiconductor work function difference TYU6.3 Consider an n+ polysilicon gate in an MOS structure with a retype silicon substrate. The doping concentration of the silicon is . Using . Equation (6.19), find the value of TYU6.4 Repeat Exercise TYU6.3 for a p+ polysilicon gate using Equation (6.20). TYU6.5 An MOS device has the following parameters: aluminum gate, p-type substrate with , , and .Determine the threshold voltage. TYU6.6 Consider an MOS device with the following parameters: p+ polysilicon gate, n-type substrate with , , and . (Use Figure 6.21.3 Determine the threshold voltage. TYU6.7 The device described in Exercise TYU6.6 is to be redesigned by changing the n-type doping concentration such Mat the threshold voltage is in the range All other parameters remain the same. For example,forand 6.4|CAPACITANCE-VOLTAGE CHARACTERISTICS Objective: Describe and analyze the capacitance-voltage characteristics of a MOS capacitor. The MOS capacitor structure is the heart of the MOSFET. A great deal of information about the MOS device and the oxide-semiconductor interface can be obtained from the capacitance versus voltage or C-V characteristics of the device. The capacitance of a device is defined as (6.39) where d Q is the magnitude of the differential change in charge on one plate as a function of the differential change in voltage dV across the capacitor. The capacitance is a small-signal or ac parameter and is measured by superimposing a small ac voltage on an applied dc gate voltage. The capacitance, then, is measured as a function of the applied dc gate voltage. 6.4.1 Ideal C-V Characteristics First we will consider the ideal C-V characteris