氧化物薄膜晶体管的制备与分析.pdfVIP

的器件随着不同的氧氩比而表现出不同的电学性能，实验表明，随着氧气含量的增 高，由于ZnO 的电阻率的增高，器件的性能随之下降。 关键词： 薄膜晶体管 磁控溅射 沟道层厚度 非晶态 氧氩比 V V ABSTRACT Thin-film transistor is a kind of field-effect device that composed of deposited insulator, semiconductor and metal. It is the center element in active matrix organic light-emitting diode and active matrix liquid crystal display. However, the amorphous silicon TFT has low field effect mobility, and it is photosensitivity, while poly silicon TFTs production process is complicated and costly, thus, the scope of their wider application is limited. In recent years, the research on oxide TFT has gained huge progress. Oxide TFT is famous for its good uniformity, high mobility and good stability, which shows a great prospect. TFTs with In O , ZnO channel layer deposited through DC sputtering were fabricated using shadow 2 3 mask. The dependence of performance on channel layer thicknesses and O2:Ar ratio were investigated in detail. In2O3 thin films were deposited on glass substrates by direct current magnetron sputtering technique with different experimental conditions, such as: room temperature, DC power, gas ratio of Ar to O2 and pressure. The X-ray diffractometery, scanning electron microscopy were used to investigate the lowest defect density and grain fabulous. it was found that the film had high crystal quality and grain fabulous when the temperature was room temperature, the power was 38W, the ratio of O :Ar=10:30 and the