偏压对ITO薄膜生长模式和光电性能的影响.PDF

第20卷摇 第4期 材摇 料摇 科摇 学摇 与摇 工摇 艺 Vol.20 No.4 摇 摇 20 12年8月 MATERIALS SCIENCE TECHNOLOGY Aug. ,2012 摇 摇 摇 摇 摇 摇 偏压对ITO薄膜生长模式和光电性能的影响 马瑞新,李士娜,锁国权,任摇 磊 (北京科技大学 冶金与生态工程学院,北京 100083) 摘摇 要:为明确溅射偏压对ITO薄膜性质的影响,用射频磁控溅射法于室温在玻璃衬底制备出ITO透明导电 薄膜,研究了不同偏压下ITO薄膜的生长模式、光学和电学性能.结果表明:随着偏压的增加,薄膜沉积模式 经历了沉积、沉积和扩散、表面脱附3种方式;AFM和SEM显示,偏压为100 V 时,膜层表面光洁、均匀,粗糙 度最小,均方根粗糙度为1.61nm;XRD分析表明偏压会影响与薄膜的择优取向,偏压为100 V 时,薄膜晶粒 -4 取向为(222)面;薄膜偏压为120 V 时,薄膜的光电性能最佳,电阻率最低为2.59伊10 赘 ·cm,可见光区的 平均透过率在85 %以上;偏压的大小使薄膜的吸收边发生了“蓝移冶或“红移冶. 关键词:ITO薄膜;偏压;生长模式;微观结构;光电性能 中图分类号:O484.4 文献标志码:A 文章编号:1005-0299(2012)04-0065-05 Effects of sputtering bias鄄voltage on ITO thin films growth modes and photoelectric properties MA Rui鄄xin,LI Shi鄄na,SUO Guo鄄quan,REN Lei (School of Metallurgical and Ecological Engineering,University of Science and Technology Beijing,Beijing 100083,China) Abstract:To clarify the effect of sputtering bias鄄voltage on the photoelectric properties of indium tin oxide (ITO) thin films,the ITO thin films were deposited by RF magnetron sputtering on glass substrates at room temperature and the growth modes,electrical and optical properties of these films were investigated as a func鄄 tion ofthesputteringbias鄄voltage.Theresultsshow that,withtheincreasingof sputteringbias鄄voltage,thefilms deposition undergoes three modes “deposition冶,“diffusion冶 and “desorption冶.AFM and SEM investigations reveal that the films have very smooth and uniform surface with a smallest root mean square roughness of 1.61nm at 10