磁控溅射ZnO基TFT的研究-电子器件.PDF

第34 卷 第6期 电 子 器 件 Vol.34摇 No.6 2011年12 月 ChineseJournal of Electron Devices Dec.2011 Study on ZnO鄄Based Thin Film Transistors* * * SHEN Ni,LIN Zulun ,QI Kangcheng ,YANGLongjie,YE Zhongbiao,WANGZhujiao (School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu610054,China) Abstract:Al thin film was grown on SiO/ n-Si(111)substrate by the method of the DC magnetron sputtering,and 2 it became the source and drain by photolithography and etching. Then,ZnO thin film was grown by the RF magnetron sputtering.Finally a bottom鄄gate鄄type ZnO鄄TFT was fabricated successfully.The measurements showed that the device had an obviousfield effect performance and a favorable saturation characteristic,the ZnO thin film exhibited a preferred orientation along the c鄄axis,and the average transmittance exceeded85% in the visible light. Key words:ZnO thin film transistor;output characteristic;magnetron sputtering;transmittance EEACC:2500R摇 摇 摇 摇 doi:10.3969/j.issn.1005-9490.2011.06.003 磁控溅射ZnO基TFT 的研究* * * 沈摇 匿,林祖伦 ,祁康成 ,杨隆杰,叶宗标,王祝娇 (电子科技大学光电信息学院,成都610054) 摘摇 要:采用直流磁控溅射在SiO/ n-Si(111)衬底上沉积了Al薄膜,经过光刻、刻蚀形成源漏极,再采用射频磁控溅射沉积 2 ZnO薄膜作为有源层,成功制备了底栅顶接触结构的ZnO鄄TFT,Al膜厚 135nm,ZnO膜厚 110nm。 实验结果表明,薄膜晶体管 展示出明显的栅控特性以及饱和特性,ZnO薄膜沿C轴择优取向生长,且在可见光波长区域的平均透过率超过85%。 关键词:ZnO鄄TFT;输出特性;磁控溅射;透过率 中图分类号:TN321.5;TN386.3摇 摇 摇 摇 文献标识码:A摇 摇 摇 摇 文章编号:1005-9490(2011)06-0615-03 摇 摇 自从提出薄膜晶体管(ThinFilmTransiter,TFT) 口率,对透明电子学来说也是一个富有成效的进展。 概念以来的几十年里,TFT技术已经有了巨大的发 目前,关于ZnO 薄膜有多种制备方法[9-11] ,比 展,根据其使用意图,从最初的开关作用到液晶显示