材基作业讲评-8.ppt

4-41 在20 ℃时1m3内含有1021个电荷载体的半导体的电阻率为0.1Ω·m，如果在电场为0.15V·mm-1时可传导1A的电流，试计算电导的平均漂移速度 ?=nq?=nqv/E, so, v=?E/nq= E/(nq?) =150/[1021*1.6*10-19*0.1]=9.375m/s ? 载流子的迁移率，其物理意义为载流子在单位电场中的迁移速度。;4-43已知硅和锗在300 ℃的电阻率分别为2.3×103μΩ·m和0.46μΩ·m，试分别计算硅和锗在250℃的电导率。 4-43: ln? =C -[ E g /(2kT)], 或?=?0exp[-Eg/(2kT)] ln(?1/ ?2 )= -Eg/(2k)[1/T1-1/T2] , R=1/? 硅半导体 (Eg=1.2ev, k=8.62?10-5ev)： 250?C, ? =0.15?103(Ωm)-1 锗半导体 (Eg=0.67ev, k=8.62?10-5ev)： 250?C, ? =1.14?106(Ωm)-1;4-49 产生介电损耗的原因是什么？主要的影响因素有哪些？ 定义：电介质在交变电场作用下,电能转变成热能而损耗。或P357。 主要原因：漏电电流和极化电流损耗 主要影响因素： 　(1) 分子结构：极性大，tg? 大 ；基团数目 多 tg? 大 ； (2) 小分子及杂质；(3) 多相体系；　(4) 交变电场频率；　(5) 温度;英文书: 12.11 (a) Calculate the drift velocity of electrons in germanium at room temperature and when the magnitude of the electric field is 1000 V/m. (b) Under these circumstances, how long does it take an electron to traverse a 25 mm (1 in.) length of crystal? Solution: (a) v =? E=0.38m2.(Vs-1)?1000V/m =380m/s (b) 25mm/(380m/s)= 6.6? 10-5s;12.14:(a) Calculate the number of free electrons per cubic meter for gold assuming that there are 1.5 free electrons per gold atom. The electrical conductivity and density for Au are 4.3?107(Ω-m)-1 and 19.32 g/cm3, respectively. (b) Now compute the electron mobility for Au. Solution: n=1.5?(?/M)?NA= 1.5?[19.32?106(g/m3) ?197(g/mol)]?6.02?1023=8.86?1028 m-3 ? =n|e|?e So, ?e=?/[n|e|] =(4.3 ?107Ω-1m-1) ? [(8.86?1028 m-3)(1.6?10-19C)] =3.03?10-3 m2/V-s;12.38 The intrinsic electrical conductivities of a semiconductor at 20 and 100?C are 1.0 and 500 (Ω-m)-1, respectively. Determine the approximate band gap energy for this material. Solution: ln?=C－Eg/(2kT) so, ln?1=C－Eg/(2kT1), ln?2=C－Eg/(2kT2) ln?1- ln?2=Eg/(2kT2 )-Eg/(2kT1)=(Eg/2k)[1/T2 -1/T1)] so, Eg= (ln?1- ln?2)?2k ?[1/T2-1/T1] = (ln1- ln500)?2?8.62?10-5eV/K ?(1/373 -1/293K) =1.46eV ;12.51 At temperatures between 775?C and 1100?C, the activation