应变Si调制掺杂NMOSFET电子面密度模型-电子学报.PDFVIP

11 Vol. 33 No. 11 2005 11 ACTA ELECTRONICA SINICA Nov. 2005 Si NMOSFET 胡辉勇, 张鹤鸣, 戴显英, 王顺祥, 朱永刚, 区健锋, 俞智刚, 马何平, 王喜媛 ( , , 710071) : Si( Strain Si) NMOSFET . , Si NMOSFET , , MATLAB . , . , , . : ; ; ; : TN432 : A : ( 2005) ElectronSheetDensity Model in St rainSi ModulationDoped NMOSFET HU H iyong, ZHANG Heming, DAI Xianying,WANG Sh nxiang, ZHU Yonggang,OU Jianfeng, YU Zhigang,MA Heping,WANG Xiy an (Key Lab of Ministry of Educationf or Wide BadeGap Semiconductor Materials and Devices, School of Microelectronics, Xidian niversity, Xi an, Shaanxi 710071, China) Abstract : The electronsheetdensity in the q ant m well of StrainSi mod lationdoped NMOSFET( MetalOxideSilicon Field Effect Transistor) affects switch performance.The model of electronsheetdensity in StrainSi mod lationdoped NMOSFET q ant m well is established by solving Poisson eq ations, and the model of the threshold voltage is established. Then the models are analyzed by MATLABwhen the device is static.The relations of the dopinglayer concentration and the space layer thickness to the electron sheetdensity and the threshold voltage are also disc ssed at static state.The infl ences of physical parameters of material and str ct re parameters of device on the electronsheetdensity and the threshold voltage are analyzed by sing MATLAB.With decreasing dop inglayer concentration and increasing the space layer thickness, the electronsheetdensity and the absol te val e of threshold voltage decrease. Key words: strain Si; mod lationdoped; electronsheetdensity; threshold voltage . 1