SW1N60C场效应晶体管.pdfVIP

SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 BVDSS : 600V ■High ruggedness ID : 1.0A ■RDS(ON) (Max 9 Ω)@VGS=10V ■Gate Charge (Max 6nC) 1 1 2 RDS(ON) : 9.0ohm ■Improved dv/dt Capability 2 3 1 ■100% Avalanche Tested 3 2 3 2 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, 3 such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors and SMPS. Order Codes Item Sales Type Marking Package Packaging 1 SW C 1N60C SW1N60C TO-92 TAPE 2 SW I 1N60C SW1N60C TO-251 TUBE 3