Jülich一氧化硅中间层.pdfVIP

MICROCRYSTALLINE SILICON OXIDE AS INTERMEDIATE REFLECTOR FOR THIN FILM SILICON SOLAR CELLS 1A. Lambertz, 2A. Dasgupta, W. Reetz, A. Gordijn, R. Carius, and F. Finger 1IEF5-Photovoltaik; Forschungszentrum Jülich GmbH; 52425 Jülich; Germany; Phone: ++49-(0)2461-612848; Fax: ++49-(0)2461-613735; a.lambertz@fz-juelich.de 2Physical Metallurgy Division; Indira Gandhi Centre for Atomic Research; Kalpakkam-603102; INDIA ABSTRACT: The main requirement for all stacked solar cells is proper current matching, which maybe improved by using intermediate reflector(s) between the component cells. The prerequisite for such a reflector is that it must conduct the current between the cells, reflect the wavelength range of the light which is to be absorbed by the component cell on the light incident side, and be transparent to the light required by the cell(s) beneath it. In this paper the synthesis of phosphorous doped silicon oxide films (a-SiOx :H n) with a certain volume fraction of microcrystalline Silicon (µc- Si:H n) and its application in solar cells as intermediate reflector, is reported. We have shown that this intermediate reflector in a-Si:H/µc-Si:H solar cells results for a thin top cell in a 14% higher current with similar FF and Voc compared to stacked cells without intermediate reflector. An efficiency of 11.5% was reached. This reflector has advantages due to its process compatibility with the PECVD process for solar cells. Keywords: a-Si; SiO2; Micro crystalline 1 INTRODUCTION pressure was kept constant at 4 mbar and the discharge