BSS123,215;中文规格书,Datasheet资料.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Extremely fast switching VDSS = 100 V • Logic level compatible • Subminiature surface mounting I = 150 mA D package g RDS(ON) ≤ 6 Ω (VGS = 10 V) s GENERAL DESCRIPTION PINNING SOT23 N-channel enhancement mode PIN DESCRIPTION field-effect transistor in a plastic envelope using ’trench’ 1 gate 3 technology. Top view 2 source Applications:- • Relay driver 3 drain • High-speed line driver • Telephone ringer 1 2 The BSS123 is supplied in the SOT23 subminiature surface mounting package.