钽酸锂薄膜红外探测器探测性能的模拟研究.pdfVIP

SEMICONDUCTOR OPTOELECTRONICS Vol. 31 No. 1 eb. 2010 罗文田, 张德银, 彭卫东, 张 熙 ( , 618307) : 建立了热释电钽酸锂薄膜红外探测器理论模型, 用五层薄膜系统模拟了探测器结 构, 用钽酸锂晶体参 , 模拟了探测器结构参 与探测率等性能指标之间的关系, 研究了硅衬底厚 度和钽酸锂薄膜厚度对探测器性能的影响模拟结果显示, 硅衬底彻底腐蚀形成悬空结构是减小 探测器热传导损耗的最有效途径; 热释电钽酸锂膜层越薄, 器件探测率越高探测器电压响应同时 取决于钽酸锂膜层厚度和探测器外接电路参 使探测器整体性能最佳的钽酸锂膜层厚度为 1~ 2 Lm : ; ; ; : T N215 : A : 1001- 5 868( 2010) 01- 0060- 04 Simulation Study on Detecting Property of Lithium Tantalate Thin ilm Infrared Detector L U O Wen ian, ZH A N G Dey in, PEN G Weido ng , ZH A N G Xi ( Aviation Engineeing College, Civil Aviation light University of China, Guanghan 618307, CHN) Abstract: T he heory models of he pyro elec ric li hium an ala e hin f ilm infrared de ec o r w ere es ablished by u sing he f iv e layer f ilm sy s em o simula e he s ruc ur e of he de ec or and using he parame ers o f li hium an ala e cr ys al o r esearch he rela ion be w een he s ruc ural parame ers and he de ec ivi y perf ormance. T he simula ed resul s show ha he bes ef fec ive me hod f or reducing he lo ss of her mal conduc ivi y is o f orm a su spended s r uc ure by e ching off silicon subs ra e, and he hinner he li hium an ala e pyr oelec r ic film, he higher he curren r esponse and de ec ivi y of he de ec or . T he v ol age response depends on bo h he hickness of li hium an ala e f ilm and he parame ers of he ex ernal cir cui s . T he op im iz ed hickness is abou 1~ 2 Lm. Key words: de ec ivi y ; inf rar ed de ec or; li hium an ala e f ilm; heor e ical simula io n 0 , , ; , ,