mem s开关中氮化硅薄膜工艺研究 - 福州大学学报（自然科学版.pdfVIP

37 1 ( ) o.l 37 No. 1 2009 2 JournalofFuzhouUniversity(NaturalScience Edition) Feb. 2009 : 1000- 2243( 2009) 01- 0050- 04 MEMS , (, 350002) : PEC D . (PI) , . : ; ; ; MEMS : TN405 : A Study on th e silicon- n itride film in M EM S sw itches XU Dan- qing, YU Ying ( College ofPhysics and Information Engineering, FuzhouUniversity, Fuzhou, Fujian 350002, China) Abs tract: The factors of exerting effect upon the residualstresswere analyzed. These factors basically include the thickness of deposition film, the suitable temperature during PEC D, the contam inations created by reaction gas and thematch of the thermal stresses in multi- layers. The residual stresses upon silicon- nitride thin film are controled by dividing the PI sacrificial layer w ith lithography, de- positing by layer aswell as rapid thermal annealing. In the end, the qualified film is successfully de- posited. Keywords: silicon- nitride; flmi ; residualstress; MEMS sw itch , , . , , (MEMS). - 6 - 1 ( PI). PI 10 K , - 5 - 1 10 K , PI, . , . , , [ 1- 3] , , PI . , PI 0. 7~ 0. 8 Lm, MEMS. 1 2. 5Lm PI, . PI , , , PI, PI, PI, [4] , PI . PEC D, SiH (N 12% )NH () 4 2 3 . SHi BNH 38B8, 250W, 6Pa, 280e ( PEC D- 4 3 2E) 3, 0. 2318, 0. 232 0 0. 2494 Lm, 0. 71Lm : 2008- 05- 26 : ( 1983- ), , . : ( 2006J0032) 1