pdf 33299 k - 福州大学学报.pdfVIP

36 3 ( ) Vo.l 36 No. 3 2008 6 Journal of Fuzhou Un iversity( Natural Science) Jun. 2008 : 000- 2243( 2008) 03- 0374- 04 FeS 2 , , (, 350002) : 653K 36 2 h, FeS . 2 : 6 h , , . 5~ . 7 eV, . 3 8 # cm. : FeS ; ; 2 : TM 9 4. 4; TN405 : A Influence of sulfuration tim e on the structure and properties of FeS film s 2 WU X in- kun, ZHONG N an- bao, CHENG Shu- ying ( College of Physics and Information Engineering, Fuzhou Un iversity, Fuzhou, Fujian 350002, China) Abstract: FeS film sw ere prepared by sulfurizating Fe film s at temperature of 653 K and tmi e of 3, 6 2 and 2 hours. The composition, structure, electrical and optical properties of the filmsw ere investiga- ted. It is indicated that the composition of the films is close to stoichiometric, its direct bandgap is about . 5~ . 7 eV and its resistivity is around . 38 # cm w hen the sulfurization tmi e is greater than 6h. Keywords: FeS films; sulfurization tmi e; preparation 2 ) ) ) , ( 0. 95 eV ) A 05 - 3 cm ( K 0 nm), , , , , [ ] . , FeS , 2 , . , .