二氧化钒多晶薄膜的掺杂改性 - 红外技术.pdfVIP

第27 卷 第5 期 红 外 技 术 Vol.27 No.5 2005 年9 月 Infrared Technology Sep. 2005 二氧化钒多晶薄膜的掺杂改性* 谢太斌，李金华，谢建生，但迪迪，范利宁，袁宁一 （江苏工业学院功能材料实验室，江苏常州 213016 ） 摘要：掺杂能明显改变二氧化钒薄膜的相变温度，影响其电学和光学性质。研究表明：W 、Mo 等大尺 寸原子掺杂可以有效降低相变温度，而 Al 、P 等小尺寸原子掺杂则使相变温度升高。综述、比较了不 同掺杂方法和掺杂元素对相变、相变滞豫、电阻和透射性能的影响，介绍了用离子束增强沉积方法对 二氧化钒薄膜掺杂改性的优点。综合分析表明，通过对二氧化钒多晶薄膜的掺杂改性，将相变温度降 至室温附近，可以大大提高薄膜的室温电阻温度系数。 关键词：二氧化钒薄膜；掺杂改性；相变 中图分类号：TN213，O552.6，TB43 文献标识码：A 文章编号：1001-8891(2005)05-0393-06 Modification of Polycrystalline Vanadium Dioxide Film by Doping Methods XIE Tai-bin ，LI Jin-hua ，XIE Jian-sheng，DAN Di-di，FAN Li-ning ，YUAN Ning-yi (Functional Materials Lab., Dept. of Information Science, Jiangsu Polytechnic University, Jiangsu Changzhou 213016, China) Abstract ：Phase transition temperature (T ) of VO thin films was changed obviously by doping methods and c 2 then the electrical and optical properties were influenced. It’s indicated that the Tc can be reduced by doping with the elements of W, Mo, etc, while increased by doping with Al, P, etc. Effects of different doping methods and different impurity upon the phase transitions, temperature hysteresis, optical and electrical properties were compared. Based on the review, the advantage of modification for polycrystalline VO 2 films formed by Ion Beam Enhanced Deposition (IBED) was introduced. It is clear that to increase the TCR of VO2 films greatly, the phase transition temperature of the VO2 films should decrease to the room temperature by doping methods. Key words：Vanadium dioxide film；Doping modification ；Phase transitions 引言 二氧化钒薄膜是一种