晶体二极管的分类一、根据构造分类半导体二极管主要是依靠PN结而工作（The classification of diode is based on the PN junction）.docVIP

晶体二极管的分类一、根据构造分类半导体二极管主要是依靠PN结而工作（The classification of diode is based on the PN junction） The waves of the wind were scattered, and the stars were scattered. The window contains the west ridge snow, door mooring east wu wanli boat. Jiangshan generation talented people, each led the breeze for hundreds of years. Under the eastern hedge, you can see nanshan. One, one, one, one, one. Classification of crystal diodes 1. Classification by construction Semiconductor diodes are mainly based on PN junction. The point contact type and schottky type which are indivisible with PN junction are also included in the general diode range. According to the characteristics of PN structure, the crystal diode is classified as follows: 1. Point contact diode The point contact diode is formed by pressing a metal needle on a single chip of germanium or silicon and then through the current method. Therefore, the PN junction has a small electrostatic capacity and is suitable for high frequency circuits. However, compared with the junction type, the point contact diode is poor in the forward and backward characteristics, so it cannot be used for large current and rectifier. Its cheap because its simple. It is widely used in the general use of small signal detection, rectifier, modulation, mixing frequency and amplitude limit. 2. Key diode Key diodes are formed by welding or silver filaments on a single wafer of germanium or silicon. Its characteristics are between point contact diodes and alloy diodes. Compared with the point contact type, although the PN junction capacity of the keyed diode increases slightly, the forward characteristic is especially good. Multiple switching applications, sometimes applied to detection and power supply rectifier (no more than 50mA). In bonding diodes, the diodes of the fused wire are sometimes called the gold bond, and the diodes of the fused wire are sometimes referred to as the silver bond. 3. Alloy diode In a single chip of N type germanium or silicon,