InP-Al2O3堆栈在退火过程中的热稳定性研究.pdfVIP

·研究与设计· InP／A1203堆栈在退火过程中的热稳定性研究 朱云娜，王星录，董红 (南开大学电子信息与光学工程学院，天津300350) Thermal of StacksPost InP／A1203 Stability upon DepositionAnnealing ZHU Yun—na。WANG Xing-lu，DONGHong (The Electrical and 300350，China) Departmentof In-formationOpticalEngineering，NankaiUniversity，Tianjin Ill—Vsemiconductorsare tobe inlOW transistorsatsub一10 Abstract：Group promisingapplied power am nodefor diffusionandde— their interfacial technology highchargemobility．Thechemistry，elemental ofthe stacksbeforeandafter are InP／A12 sorption 03 postdepositionannealing(PDA)process oxidesaredetectedbefore byusingangle—resolvedX—rayphotoelectronspectroscopy(ARXPS)．Indium andafterPDA indiumoxides isseen PDA to500℃． process，and desorptionupon temperatureincreasing at After annealed oxidesdiffusionisdetectedARXPS．Interfaceelemental being 500℃，phosphorus by and ofthede— diffusion can affectinterface andelectrical desorptionsignificantly trapdensity properties vices，whichinfluence and ofdevices．Interfaceshouldbetakenand directly stabilityreliability passivation shouldbeavoidedinInPdevicesfabrication． hightemperatureprocess Keywords：ARXPS，InP，Annealing，Diffusion，Desorption 摘要：源于其高电荷迁移率，III-V族半导体材料有望在10nm技术节点以下的低功耗晶体管上得到采用。