第一章-阻变式存储器存储机理.pdfVIP

物理学和高新技术 阻变式存储器存储机理 王 　永 　　管伟华 　　龙世兵 　　刘 　明 　　谢常青 (中国科学院微电子研究所 　纳米加工与新器件集成技术实验室 　北京 　100029) ( ) 摘 　要 　　阻变式存储器 re sistive random acce ss m emory, RRAM 是以材料的电阻在外加电场作用下可在高阻态和 低阻态之间实现可逆转换为基础的一类前瞻性下一代非挥发存储器. 它具有在 32nm 节点及以下取代现有主流 F la sh 存储器的潜力 ,成为 目前新型存储器的一个重要研究方向. 但阻变式存储器的电阴转变机理不明确 ,制约它的进一步 研发与应用. 文章对阻变式存储器的体材料中几种基本电荷输运机制进行了归纳 ,总结了目前对阻变式存储器存储 机理的理论模型. ( ) ( ) 关键词 　　非挥发性 ,阻变式存储器 RRAM ,综述 ,空间电荷限制电流 SCLC , 细丝 The storage m echan ism of resisitive random access WAN G　Yong　　GUAN W eiHua　　LON G Sh iB ing　　L IU 　M ing 　　X IE ChangQ ing ( Key L abora tory of N ano - F abrica tion and N ovel D evices In teg ra ted Technology, Institu te of M icroelectron ics, Ch inese A cadem y of S ciences, B eij ing 100029, Ch ina) Ab stract　　R esisitive random acce ss m emories ( RRAM s) are one of the mo st p rom ising next - generation non - volatile m emory device s, based on reversib le sw itch ing between h igh and low resistance state s by the app lication of an external electric field. They have been w idely studied as a rem arkab le new typ e of m emory device, due to their potential for scaling down beyond the 32nm node lim it to rep lace cu rrent m ain stream fla sh m emory devices. How ever, controversy about the re sistance sw itch ing m echan ism of RRAM s has severely lim ited their further develop m ent and app lication. In th is article certain essential models of the charget