LED通用历史资料1（LED general history data 1）.docVIP

LED通用历史资料1（LED general history data 1） This article is contributed by jeepest Doc documents may have a poor browsing experience at the WAP end. It is recommended that you choose TXT, or download the source file to the native view. Lighting principle: principle of LED lighting, LED by Ⅲ - Ⅳ compounds, such as GaAs (gallium arsenide), GaP (gallium phosphide), GaAsP phosphorus (GaAs) made of semiconductor, such as its core is the p-n junction. Therefore, it has the i-n feature of general p-n junction, which is the positive guide, reverse cut-off and breakdown characteristics. Also, in a certain way Under the piece, it also has the luminescence characteristic. In the forward voltage, the electron is injected into the P area by N region, and the hole is injected into N region by P zone. A small number of carriers entering the opposite area (children) are composed of the majority of carriers (multiple children). If the luminescence occurs in the P area, then the injected electrons and the valence are directly combined with the cavitation, or they are captured by the luminescent center and then combined with the cavitation. In addition, this kind of light composite some electrons are not luminous center (the center between the conduction band, interface with near middle) capture, then Every time again with hole compound, the energy released is not big, could not form visible light. The higher the ratio of the luminescent compound to the non-luminous composite, the higher the quantum efficiency. Since the composite is luminescent in the childrens diffusion zone, the light is generated only within mu m near the PN junction. Theory and practice show that the peak wavelength of the light wavelength is the band width of the semiconductor material of the luminescent region ORR photoelectric [1] Guan, namely?????? The unit of Eg in lambda is 1240 / Eg (mm) is electron volts (eV). If visible light can be produced (wavelength is 380nm violet ~ 780nm red light), Eg of semiconductor