Bi_2O_3和Sb_2O_3的预复合对ZnO压敏电阻性能的影响_翁俊梅.pdfVIP

31 10 Vol.31 No.10 2012 10 ELECTRONIC COMPONENTS AND MATERIALS Oct. 2012 Bi O Sb O ZnO 2 3 2 3 Bi O Sb O Bi O Sb O ZnO 2 3 2 3 2 3 2 3 Bi O Sb O 0.7:1.0 ZnO 2 3 2 3 361 V/mm867×10–8 2 A/cm 5 kA 8/20 μs 2.6 2.5% ZnO BiSbO4 TN283 A 100110-0012-04 Effects of pre-compounding of Bi O and Sb O on the properties 2 3 2 3 of ZnO varistor WENG Junmei, JIANG Shenglin, XU Yuchun, ZHANG Guangzu (Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, China) Abstract: Bi O /Sb O composites with different compositions were prepared for ZnO varistor preparation by the 2 3 2 3 solid-state reaction method, and the effects of Bi O /Sb O composites on the density, grain structure and electrical 2 3 2 3 properties of ZnO varistors were studied. The results indicate that: when the mole ratio of Bi O and Sb O is 0.7:1.0, the 2 3 2 3 prepared ZnO varistor shows the best performance. This varistor shows the most dense structure, a potential gradient of 361 V/mm, a nonlinear coefficient of 86 and a leakage current density of 7×10–8 2 A/cm . In addition, the residual voltage r