附表六-长庚大学光电工程研究所.PDF

附表六 長庚大學學生出席國際會議報告書 填寫日期：99 年 06 月 20 日 系所及年級 光電所 報告人姓名 范公誠 學號 M9824023 2010/05/31-2010/0 會議期間 6/04 核定補助日期 99 年7月 會議地點 日本高松 會議名稱 中文( )化合物半導體國際專题討論會 ( 英 文 )International symposium on compound semiconductor 發表論文題目 中文( ) 具有應力補償Al0.03 Ga0.97N-In0.01 Ga0.99N超晶格 請附論文全( 能障之 InGaN 多重量子井 文) ( 英文 ) InGaN Multiple Quantum Wells With Strain-Compensated Al0.03 Ga0.97N-In0.01 Ga0.99N Superlattice Barrier Nowadays, InGaN-based light-emitting diodes (LEDs) with emission wavelengths in the range from ultraviolet to green have extensively used for solid-state lighting applications. For the LEDs with InGaN/GaN multiple quantum wells (MQWs) as the active layer, realization of full color emission seems to be possible by tuning solitary indium compositions. Because InGaN epilayers are grown on a lattice-mismatched GaN template, higher indium composition causes more 論文內容摘要 strain-induced defects such as V-defects and misfit-dislocations in InGaN epilayers. On the other hand, the c-plane–grown InGaN inevitably experiences piezoelectric polarization along with spontaneous polarization-induced fields; consequently, spa