180nm spice level 49 参数.docxVIP

基本模型参数TOXgate oxide thicknessXJjunction depthNGATEPoly gate doping concentrationVTH0threshold voltage of long channel device atVbs= 0 and small Vds(typically 0.7 for nchannel,- 0.7 for p-channel)NSUBsubstrate doping concentrationNCHpeak doping concentration near interfaceNLXlateral nonuniform doping along channelK1first-order body effect coefficientK2second-order body effect coefficientK3narrow width effect coefficientK3Bbody width coefficient of narrow widtheffectW0narrow width effect coefficientDVT0Wnarrow width coefficient 0, for Vth,at small LDVT1Wnarrow width coefficient 1, for Vth,at small LDVT2Wnarrow width coefficient 2, for Vth,at small LDVT0short channel effect coefficient 0, for VthDVT1short channel effect coefficient 1, for VthDVT2short channel effect coefficient 2, for VthETA0subthreshold region DIBL (Drain InducedBarrier Lowering)coefficientETABsubthreshold region DIBL coefficientDSUBDIBL coefficient exponent insubthresholdregionVBMmaximum substrate bias, for VthcalculationU0low field mobility at T = TREF = TNOMUAfirst-order mobility degradation coefficientUBsecond-order mobility degradationcoefficientUCbody bias sensitivity coefficient of mobility-4.65e-11 for MOBMOD=1,2 or,-0.0465 for MOBMOD = 3A0bulk charge effect coefficient for channellengthAGSgate bias coefficient of AbulkB0bulk charge effect coefficient for channelwidthB1bulk charge effect width offsetKETAbody-bias coefficient of bulk charge effectVOFFoffset voltage in subthreshold regionVSATsaturation velocity of carrier at T = TREF =TNOMA1first nonsaturation factorA2second nonsaturation factorRDSWparasitic source drain resistance per unitwidthPRWGgate bias effect coefficient of RDSWPRWBbody effect coefficient of RDSWWRwidth offset from Weff for Rds calculationNFACTORsubthreshold region swingCITinterface state capacitanceCDSCdrain/source and channel couplingcapacitanceCDSCDdrain bias sensitivity of CDSCCDSCBbody coefficient for CDSCPCLMcoefficient of channel length modulationvalues 0 will resu