太赫兹波几个基本问题.pdfVIP

Expert Forum 太赫兹波的几个基本问题 袁明文 ( 中国电子科技集团公司第十三研究所 专用集成电路国家 重点实验室, 石家庄 0500 51) : 介绍了用于加工太赫兹波元件的微机械加工技术 ( 铣削放电加工电铸湿法腐蚀Si 干法腐蚀Si厚光刻胶: SU - 8 和LIGA) 及其最新结果重点描述了应用于太赫兹波的器件和 集成电路, 如将可用于太赫兹波的各种新颖二极管半导体纳米器件新的高电子迁移率晶体 管毫米波集成电路量子器件红外器件量子 联激光器 ( 单极 间跃迁激光器) 基于带 间跃迁量子机理的半导体器件 ( 譬如量子 联激光器) 的频率极限高于与半导体能带隙相关器件 的频率, 其大多数体半导体的频率可以达到10 T Hz 以上但是, 基于经典的电子扩散传输机理 的二极管三极管的高频极限则受限于渡越时间和寄生参数RC 时间常数 : 太赫兹波; 太赫兹波源; 高电子迁移率晶体管; 量子器件; 量子 联激光器 : O471. 1 : A : 1671-4776 ( 2009) 05-0257-06 Several Key Problems of Terahertz Yuan M in w en (N ational Key Laboratory of A SIC, The 13th Research Institute, CETC, Shij iazhuang 0500 51, China) Abstract: The latest results usin micromachinin techniques ( millin , EDM , electr o-formin , silicon w et etchin , silicon dry etchin , SU-8 and LIGA) to fabricate terahertz components are presented. Advanced devices and inte rated circuits for terahertz application, such as var ious novel diodes, semiconductor nano-devices, new HEMT s, millimeter-wave inte rated circuits, terahertz and infr ar ed devices quantum cascade lasers ( unipolar interband-transition laser) , are emphasized. The frequency limitations of semiconductor devices based on quantum mechanical interband transitions, most of w hich are up to 10 T Hz, are hi her than those of the devices correspondin to semiconductor ener y ap. How ever, the hi h frequency limits of diodes and tr ansistors based on the classical diffusive transport of electrons are limited by the transient time and parasitic RC time constant. Key words: terahertz wa