Ti1-2xAlxNbxO2陶瓷介电性质研究.pdfVIP

Applied Physics 应用物理, 2016, 6(11), 239-249 Published Online November 2016 in Hans. /journal/app /10.12677/app.2016.611030 Study of the Dielectric Properties of Ti Al Nb O Ceramics 1-2x x x 2 Xingbo Wu, Kai Liu, Yalong Sun, Juan Xie, Shoulin Gu College of Physics, Optoelectronics and Energy, Soochow University, Suzhou Jiangsu st th nd Received: Nov. 1 , 2016; accepted: Nov. 14 , 2016; published: Nov. 22 , 2016 Copyright © 2016 by authors and Hans Publishers Inc. This work is licensed under the Creative Commons Attribution International License (CC BY). /licenses/by/4.0/ Open Access Abstract In this work, the (Al + Nb) co-doped anatase TiO2 ceramics were prepared by conventional solid phase sintering, and the concentrations were 0.5%, 1%, 2% and 5%, respectively. The optimized annealing conditions for (Al + Nb) co-doped TiO2 ceramics were 1500˚C for 10 h under air atmos- phere and the concentration was 2%. According to the sample’s analysis of the microstructure, element, valence, different temperature of dielectric properties, we find that the structure of ce- ramics transforms from anatase phase structure into rutile phase structure, and all the ceramics have very high density. Their dielectric properties have a very good frequency and temperature stability. The primary origin of the observed colossal dielectric permittivities apparent in our ce- ramics is not fundamentally related to surface barrier layer capacitor (SBLC) effect and grain boundary effect. Electron-pinned defect-dipoles effect is responsible for the excellent CP proper- ties observed in (Al + Nb) co-doped TiO2. Keyw