简介四族半导体的穿隧效应与穿隧电晶体-国家奈米元件试验室.PDF

NANO COMMUNICATION 23 No. 1 27 A Brief introduction to Band-to-band Tunneling in Group-IV Semiconductor Materials and Tunnel FETs ( ) Kane Abstract Tunnel field-effect transistors have the potential to overcome the subthreshold slope limit of the conventional metal-oxide-semiconductor field effect transistors at room temperature. They allow to further scale down the supply voltage, threshold voltage and power consumption of the integrated circuits. The one of the main challenges o f g r o u p - I V - b a s e d T F E Ts i s t h e u n s a t i s f a c t o r y o n - c u r r e n t d u e t o t h e p h o n o n - assisted tunneling through the large indirect bandgaps. This ar ticle is devoted to discuss the direct and indirect band-to-band tunneling in group-IV semiconductors. Keywords MOSFET CMOS Tunnel FET Subthreshold Slope SS 4 28 VDD 1.1 1 [4]