ANALYSIS AND DESIGN OF ANALOG （模拟分析和设计）.pdf

ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fifth Edition International Student Version PAUL R. GRAY University of California, Berkeley PAUL J . HURST University of California, Davis STEPHEN H . LEWIS University of California, Davis ROBERT G . MEYER University of California, Berkeley WILEY Contents CHAPTER 1 1.5.2 Comparison of Operating Regions of Models for Integrated-Circuit Active Bipolar and MOS Transistors 45 Devices l 1.5.3 Decomposition of Gate-Source 1.1 Introduction - 1 Voltage 47 1.5.4 Threshold Temperature 1.2 Depletion Region of a pn Junction 1 Dependence 47 1.2.1 Depletion-Region Capacitance 5 1.5.5 MOS Device Voltage Limitations 1.2.2 Junction Breakdown 6 48 1.3 Large-Signal Behavior of Bipolar 1.6 Small-Signal Model s of MO S Transistors 8 Transistors 49 1.3.1 Large-Signal Models in the 1.6.1 Transconductance 50 Forward-Active Region 8 1.6.2 Intrinsic Gate-Source and 1.3.2 Effects of Collector Voltage on Gate-Drain Capacitance 51 Large-Signal Characteristics in the 1.6.3 Input Resistance 52