n型SiC的Ni基欧姆接触中C空位作用的实验证明 Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide.pdfVIP

第 卷 第 期 半 导 体 学 报 28 1 Vol.28 No.1 年 月 9 2007 1 CHINESEJOURNAL OF SEMICONDUCtORS Jan. 2007 Evidenceof the Roleof Carbon Vacanciesin Nickel-based ohmic Contactsto n-T eSilicon Carbidee yp T 9 9 Guo ~ui Zhan Yimen and Zhan Yumin g g g ( Ke Laborator o the Ministr o Education or Wide Band-ga Semiconductor Materials and Devices9 $ $ f $ f f P 9 9 , 9 ) Microelectronic School XidianUniversit Xi an 710071 China $ + C Abstract N-wellsarecreated b P ion im lantation intoSi-faced -t e4H-SiCe ila er.ti and Ni arede os- Y P P YP P Y P ited in se uence on the