Microwave Amplifiers University of San Diego（微波放大器圣地亚哥大学）.pdfVIP

EEE 194 RF Microwave Amplifiers Design of Microwave Transistor Amplifiers Using S Parameters Microwave amplifiers combine active elements with passive transmission line circuits to provide functions critical to microwave systems and instruments. The history of microwave amplifiers begins with electron devices using resonant or slow-wave structures to match wave velocity to electron beam velocity. The design techniques used for BJT and FET amplifiers employ the full range of concepts we have developed in the study of microwave transmission lines, two-port networks and Smith chart presentation. The development of S-parameter matrix concepts grew from the need to characterize active devices and amplifiers in a form that recognized the need for matched termination rather than short- or open-circuit termination. Much of the initial work was performed at the Hewlett-Packard Company in connection with the development of instruments to measure device and amplifier parameters. Well begin by considering microwave amplifiers that are 1) Small signal so that superposition applies, and 2) Built with microwave bipolar junction or field-effect transistors References The following books and notes are references for this material: Pozar1, D. M., Microwave Engineering 2 Gonzalez , G., Microwave Transistor Amplifiers Vendelin, Pavio Rohde3, Microwave Circuit Design Using Linear and Nonlinear Techniques Review of Transmission Lines 1 Pozar, D., Microwave Engineering , 2nd Edition, J. Wiley, 1998, pg. 600-640 2 Gonzalez, G., Microwave Transistor Amplifiers, 3 Vendelin, Pavio Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, J. Wiley, 1990 - 1 - © 1994-99 D. B. Leeson For the purpose of characterizing microwav