Programmable ResistiveSwitch Nanowire （可编程ResistiveSwitch纳米线）.pdfVIP

Letter /NanoLett Programmable Resistive-Switch Nanowire Transistor Logic Circuits Wooyoung Shim,†,‡, ∥ Jun Yao, †, ∥ and Charles M. Lieber*,†,§ †Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States ‡Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea §School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138, United States S *Supporting Information ABSTRACT: Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well- defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks. KEYWORDS: Nanoprocessor, nanocomputing, nanoelectronics, programmable logic arrays, crossbar arrays, memory Significant effort in the nanoelectronics field has been placed