电荷共享效应的RESURF横向功率器件击穿电压模型-应用科学学报.PDF

第 32 卷 第 2 期 应 用 科 学 学 报 Vol. 32 No. 2 2014年3月 JOURNAL OF APPLIED SCIENCES — Electronics and Information Engineering Mar. 2014 DOI: 10.3969/j.issn.0255-8297.2014.02.014 电荷共享效应的 RESURF 横 向功率器件击穿电压模型 张 珺， 郭宇锋， 黄 示， 姚佳飞， 林 宏， 肖 建 南京邮电大学 电子科学与工程学院，南京 210003 摘摘摘 要要要：：： 分析降低表面场(reduced surface field, RESURF)横 向功率器件耐压机理，假定共享区电荷沿对角线分 配给横 向和纵 向耗尽区，建立 了一个新 的 RESURF 横 向功率器件击穿 电压模型. 该模型能准确描述漂移区全耗 尽和不全耗尽情况下 的耐压特性，并具有数学表达式简单 以及物理概念清晰的优点. 在此基础上，导出了一个新 的 RESURF 判据 ，进而给 出了一个用于指导器件设计 的漂移区剂量上下限. 解析结果与实验结果吻合较好，验证 了击穿电压模型和 RESURF 判据 的正确性. 关键词：降低表面场 ；电荷共享 ；击穿电压；一维模型 中图分类号：TN305 文章编号：0255-8297(2014)02-0209-06 Breakdown Model of RESURF Lateral Power Devices Based on Charge-Sharing Effect ZHANG Jun, GUO Yu-feng, HUANG Shi, YAO Jia-fei, LIN Hong, XIAO Jian College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China Abstract: A breakdown model for RESURF lateral power device is developed. Based on the analysis of the breakdown mechanism in RESURF lateral power device, charges in the drift region are allocated to lateral and vertical junctions along the diagonal of the sharing area. This model can be used to investigate breakdown characteristics of the device when the drift region is fully or partially depleted. Besides, the model provides simple expressions with clear physical concepts. A new RESURF criterion is also derived to quantitate the upper and lower limits, which is useful to the design of the structure parameters. General agreements exist between the modelin