CN薄膜XPS结构分析时荷电效应的校正.pdfVIP

第 19 卷 第 1 期 中 国 表 面 工 程 Vol.19 No.1 2006 年 2 月 CHINA SURFACE ENGINEERING Feb. 2006 16 中 国 表 面 工 程 2006 年 BCN 薄膜 XPS 结构分析时荷电效应的校正 徐淑艳，马欣新，孙明仁 （哈尔滨工业大学材料科学与工程系，哈尔滨 150001 ） 摘 要：采用 X 射线光电子谱（XPS ）对 BCN 非晶纳米薄膜的结构进行表征。分别采用氩峰、污染碳和沉积单层金 3 种元素峰位来校正在 XPS 测试过程中由荷电效应引起的峰位移动，并与傅立叶红外光谱（FTIR ）进行比较，讨论了 这 3 种校正荷电效应的元素峰位选取对正确表征 BCN 膜结构的影响。分析结果表明：采用不同校正元素得到的 BCN 薄膜中元素的结合能差别很大，只有采用合适的元素校正荷电效应才能正确的表征薄膜结构；采用氩校正结合能得到 的键结构拟合结果最接近薄膜的真实结构，该方法适用于溅射气氛中含 Ar 气的 BCN 膜，且对分析膜内结构同样有效； 采用污染碳法和沉积单层金校正的结合能与真实值偏差较大。 关键词：BCN 膜；XPS ；化学结构；荷电效应 中图分类号：TG174.444 TB333 文献标识码：A 文章编号：1007−9289(2006)01−0016−05 Correction of Charging Effect on Structure Analyse of BCN Films by XPS XU Shu-yan, MA Xin-xin, SUN Ming-ren (Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001 China) Abstract ：The structure of BCN amorphous nano-films were studied by XPS. The characteristic peak of three elements of Ar, contamination carbon and deposited monolayer Au were considered as reference peak to correct the shift of the XPS spectra caused by charging effect during the XPS analysis process, and the results of XPS and FTIR analyses were compared to estimate the correctness of this method. The investigation results indicated that the calculated binding energy of BCN film depends on reference peak selection, and the correct structures can be obtained when the bonding energy was adjusted by selecting appropriate characteristic peak. The bonding structures of films corrected by Ar are quite similar with the results of FTIR analysis. This method is suitable for analyzi