基于0.35μm sige bicmos的2.5ghz低相位噪声lc压控振荡器的设计 design of a 2.5ghz low phase-noise lc-vco in 0. 35μm sige bicmos.pdfVIP

第29卷第5期 半 导 体 学 报 v01．29No．5 2008年5月 JOURNALOFSEMlCoNDUCTORS May，2008 ofa2．5GHzLowPhase-NoiseLC—VCOin SiGe Design 0．35pmBiCMOS。 Jian’，Chen Zhang Liqiang，LiZhiqiang，ChenPufeng，andHaiying Zhang (InstituteMicroelectronics，Chinese 100029，China) of AcademyofSciences，Belting Abstract：Thisintroducesa2．5GHzlow LC．VCOrealizedin0．35“mSiGeBiCMOStech． paper phase．noisecross．coupled conventionaldefinitionofaVCO isrevisedfromanew showstheim． nology．The operatingregime perspective．Analysis ofinductanceandbiascurrentselectionforoscillatornoise betweenCMOSand portance phase optimization．Differences 日lJTVCO arethen andtheconclusionsaresummarized．Inthis wires designstrategy analyzed formtheresonatorto the noise VCoisthen withother toforma improvephase performance．Theintegrated components PLL witha bandwidthof30kHz．Measurementshowsa noise frequencysynthesizerloop phase of一95dBc／Hzat100kHz offset at1MHzoffset a carrier．Ata of3V。the and一116dBc／Hz from2．5GHz supplyvoltage VCOcoreconsumes8mA． Toour is first VCOin in the differential SiGeBiCMOS China． knowledge，this cross—coupled technology words：SiGe noise Key BiCMOS； VCO；inductance；phase EEACC：1230B；2570K CLChumher：TN433Document Article