二探针扩展电阻分布法在IC芯片制造中的应用金红杰郎清华.PDF

半导体技术第34 卷第7 期2009 年7 月 P684 页起 二探针扩展电阻分布法在IC 芯片制造中的应用 金红杰，郎清华 （杭州士兰集成电路有限公司，杭州 310018 ） 摘要：论述了扩展电阻分布法的基本原理和具体操作方法，该法中两个精确排列的探针， 沿着被测晶片的磨制斜面边移动，边测试，得出系列数据。二探针扩展电阻分布法采用平式 针尖无凹痕接触模型和多层理论计算扩展电阻。总结了为提高测试准确性，在测试中需要注 意的事项。较高的空间分辨率和先进的多层算法，使二探针扩展电阻分布法能够测试多种结 构复杂的样品。因此，在IC 芯片制造过程中，二探针扩展电阻分布法广泛应用于外延、注 入和扩散等工艺，为工程师调试新工艺、优化工艺条件以及进行失效分析等工作，提供电阻 率-深度曲线图和载流子浓度-深度曲线图等数据。 关键词：二探针；平式针尖无凹痕模型；多层理论；扩展电阻 中图分类号：TN304 文献标识码：A 文章编号： The Application of Two-probe Spreading Resistance Technique in the Manufacturing Process of IC Jin Hongjie, Lang Qinghua (Silan Intergrated Circuit co., ltd., Hangzhou 310018，China) Abstract: The rationale and detailed operation method of two-probe spreading resistance technique are discussed in this paper. Two tactic probes move along the side of the grinding oblique plane on the wafer, and the measured data is recorded. A non-indenting flat tip model and a multilayer theory are used to calculate spreading resistance by the two-probe spreading resistance technique. A summary is made on what matters need attention for the improvement of measuring accuracy. Because of very high spatial resolution and advanced multilayer algorithms, the method can be used to measure many kinds of samples with complicated structures. Therefore, the method is widely used in the manufacturing process of IC such as epitaxial process, ion implantation process and diffusion process and so on. Curves of resistivity versus depth and carrier concentration versus depth are provided for engineers to debug new processes, optimize current processes and carry out failure analysis. Keywords: two-probe; non-indenting flat tip model; multilayer theory; spreading resistance 0 引言 体内的分布状况，以便优化工艺条件，进行 半导体