Surface reactions in A1203 growth from trimethylaluminium and water by ALE英文教材.pdfVIP

•:-:~::i.,~:::$ :~:~$.:!:~:!:~::::::~:~:~:::~:::~::~i$ ::~::~. applied surface science ELSEVIER Applied Surface Science 107 (1996) 107-115 Surface reactions in A 1 2 0 3 growth from trimethylaluminium and water by atomic layer epitaxy E-L. Lakomaa a,*, A. Root b, T. Suntola a a Microchemistry Ltd., P.O. Box 45, FIN-02151 Espoo, Finland b Neste Oy., Analytical Research, P.O. Box 310, FIN-06101 Porvoo, Finland Received 12 October 1995;accepted 23 December 1995 Abstract The layer by layer growth of A1203 from trimethylaluminium (TMA) and water vapour by atomic layer epitaxy (ALE) has been studied on porous large surface area silica. The use of this support enables the study of each reaction sequence brought to surface saturation by using elemental determinations, Fourier transform infrared (FTIR) and solid state nuclear magnetic resonance (NMR) spectroscopy. The chemisorption of TMA as a function of the preheat temperature of silica shows that bonding takes place to isolated OH groups and siloxane bridges. Increasing the preheat temperature of silica creates an increased amount of siloxane bridges. Increasing the chemisorption temperature of TMA leads to the reaction of double and triple siloxa