第四章_化学气相沉积课件.pptVIP

Chemical Vapor Deposition;要点： 化学气相淀积的基本原理 －过程、反应、速度 CVD特点 CVD装置 低压CVD 等离子体化学气相淀积 PECVD 金属有机物化学气相沉淀（MOCVD） ;4.1 简介;化学气相淀积，简称CVD(Chemical Vapor Deposition)是把含有构成薄膜元素的一种或者几种化合物或单质气体供给基片，借助气相作用或在基片上的化学反应生成所需薄膜。 ;1) 气体分解方式 gas decomposition (1) thermal deposition (2) plasma deposition (3) photon (laser, UV) deposition 2) CVD种类－according to temp., pressure, … CVD chemical vapor deposition APCVD atmospheric pressure... LPCVD low-pressure... VLPCVD very low pressure… PECVD plasma-enhanced... LECVD laser-enhanced... MOCVD metal-organic... ECRCVD electron-cyclotron resonance... VPE vapor-phase epitaxy ;3) 优势－advantages low cost dielectric ( poly-silicon, Si3N4, SiO2 ) and metal thin film high deposition rate high or low pressure control thickness, defect and resistivity high film quality LTCVD for semiconductors, ex., Si3N4, SiO2 and epilayer low radioactive damage But high deposition temperature and environment damage;4) 沉积参数－parameters for thin film structure (1) temperature of substrate and chamber (2) growth rate (3) gas pressure These parameters affect on surface speed of the involved atoms. ;Overview not all components are found in all CVD systems: ???????????????????????????????????????????????????????? Source gas Reacts on substrate to deposit film;4.2 化学反应类型 1. 热分解－Pyrolysis - thermal decomposition AB(g) --- A(s) + B(g) ex: Si deposition from Silane at 650oC SiH4(g) --- Si(s) + 2H2(g) use to deposit: Al, Ti, Pb, Mo, Fe, Ni, B, Zr, C, Si, Ge, SiO2, Al2O3, MnO2, BN, Si3N4, GaN, Si1-xGex, . . . ;2. 还原－Reduction often using H2 (metal, substrate) AX(g) + H2(g) === A(s) + HX(g) - often lower temperature than pyrolysis - reversible = can use for cleaning too ex: W deposition at 300oC WF6(g) + 3H2(g) === W(s) + 6HF(g) - use to deposit: Al, Ti, Sn, Ta, Nb, Cr, Mo, Fe, B, Si, Ge, TaB, TiB2, SiO2, BP, Nb3Ge, Si1-xGex, . . . ;3. 氧化/氮化反应－Oxidation/Nitrition often using O2 /N2 AX(g) + O2(g) --- AO(s) + [O]X(g