一百条模拟设计经验（One hundred simulation design experience）.docVIP

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一百条模拟设计经验（One hundred simulation design experience）.doc

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一百条模拟设计经验（One hundred simulation design experience）

一百条模拟设计经验（One hundred simulation design experience） 1 / a capacitor and a resistor have parasitic inductance, surface mount pin type element is about 0.4nH, about 4nH. 2 / if you dont want a high bandwidth transistor oscillating, 2 pins in at least 3 pin placement in lossy components. Ferrite beads work well. 3 / when DC measurements in a circuit, the data found no meaning, should be suspected of having something in oscillation. 4 / opamps will often oscillate when driving capacitive loads. 5 / a small signal transistor base emitter voltage Vbe decreased about 0.65V and the pressure drop is about 2mV/degC. Vbe with temperature rise. 6 / the ohmic value of a resistor to multiply 0.13nV by the square root of find the noise in a 1Hz bandwidth. And then multiplied by the square root of bandwidth (HZ) gives the total noise voltage. 7 / Johnson noise current with resistance decreases. 8 / a transistor emitter impedance at room temperature for 26 ohm / Ie ma. 9 / all amplifiers are differential, because they are referenced to ground somewhere. 10 / the typical metal film resistance temperature coefficient is about 100 degrees Celsius ppm/. 11 / a quiet operational amplifier input noise voltage is 1nV/sqrt (Hz), but many of them can provide 20nV/sqrt (Hz). The current noise bipolar operational amplifier front-end with low voltage noise and higher than FET front-end amplifier. 12 / LC circuit is used as a power supply filter in the resonance frequency of filter can make the power supply noise multiplier. Use inductor with low Q to overcome this situation. 13 / using the comparator compares the operational amplifier for amplification, dont think you can use a mix of both. 14 / ceramic capacitors, NPO dielectric ceramic capacitors in addition to any other medium, should only be used for bypass applications. 15 / a N N-Channel Enhancement mode field effect transistor +Ve gate source voltage, to control the drain source channel shape. ?? 16 / small signal JFETS as low leakage di