LED调光器用到的MOS管.pdfVIP

DTS6401 Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 60 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available RDS(on) (Ω) VGS = - 10 V 0.40 f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.8 mm COMPLIANT Qg (Max.) (nC) 12 • P-Channel Qgs (nC) 3.8 • 175 °C Operating Temperature Qgd (nC) 5.1 • Dynamic dV/dt Rating Configuration Single • Low Thermal Resistance • Lead (Pb)-free Available TO-236 S (SOT-23) G 1 G 3 D S 2 D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER