光电子学(南邮)全部作业答案.pptVIP

Condition: a silicon photoconductor at 300K Background doping, ;Calculation: a)dark current ; b)the excess concentration; c) the photoconductivity; d)the device gain.;so the dark current is;b)The excess carrier density is ;d)The gain of the photoconductive detector is ;2.13 Condition: a GaAs p-i-n detector with Intrinsic layer width, ;Solution: The photon flux incident on the detector is ;2.16 Condition: An avalanche photodetector with Avalanche region width, ;3.8 Condition: a GaAs p-n+ junction LED with Electron diffusion coefficient, ;Solution: The electron minority carrier density in p-side is ;The injection efficiency is (assuming no recombination due to trap);3.9 The diode in problem 3.8 is used to generate an optical power of 1 ,;Which are also expressed by ;the current when the diode is forward bias is given by ;3.12 Condition: a GaAs LED coupled to an optical fiber with Refractive index for the core layer, ;3.15 Condition: An AlGaAs/GaAs heterojunction LED at 300K with Injection density for electrons, ;Solution: From the relationship ;for injection density of ;3.18 Condition: a heterojunction LED based on GaAs at 300K with Bias current density, ;From Fig.3.6(p140);3.21 Condition: A GaAs LED with Output power, ;where ;4.1． Condition: a GaAs laser with Cavity length, ;Thus the energy of these modes is ;4.3 Condition: a Fabry-Perot cavity with Length, ;The photon lifetime in the cavity is given by ;4.8 Condition: two GaAs/AlGaAs double heterostructure lasers are fabricated with Active region thickness, ;So the threshold current density can be calculated by ;5.1 Condition: A GaAs/AlGaAs laser with Threshold current density, ;11.2 Condition: A 1.55 ;Solution: the threshold c