氩馏份变化原因分析及氮塞预防（Cause analysis of argon fraction change and nitrogen flux prevention）.docVIP

氩馏份变化原因分析及氮塞预防（Cause analysis of argon fraction change and nitrogen flux prevention） With the development of the liquid argon sales and the process of total distillation and hydrogen free argon production, argon gas extraction has been paid more and more attention in various oxygen plants, and the output is higher and higher. I plant sales argon to create an annual economic benefit is very considerable, argon flow varies, including switching type hydrogen oxygen argon, switching full distillation hydrogen free argon molecular sieve, hydrogen oxygen argon, and 2#14000 oxygen making machine will put into the molecular sieve complete distillation hydrogen free argon. The normal and stable production of argon is of great significance to the production and operation of our factory. Nitrogen retention is a major cause of the deterioration of the argon production system. The formation of nitrogen plug is because argon fraction of nitrogen content in high temperature crude argon condenser is reduced, or even zero, so reducing the amount of condensation of crude argon or condensation, the crude argon column stopped working, causing argon fraction extracted to reduce the amount of increase in gas flow rate, flow rate decreased by trays or packing in liquid leakage, crude liquid argon (a hydrogen free argon including crude argon tower II liquid) back to the main tower, the main operating conditions of distillation tower failure, the main cold liquid level rose rapidly, the purity of oxygen decreased sharply, direct and indirect losses caused by the great. The distribution of argon tower is not fixed, conditions change slightly, changes in the concentration of oxygen and nitrogen, argon in the tower distribution corresponding to changes in the location of withdrawing argon fraction is fixed, so the drawing near the mouth of the components will be changed. The cause of the change of argon fraction is different. The different process and device have different characteristics. The