MOSFET器件回顾及展望_下_.pdf

MOSFET ( ) 1 2 1 肖德元, 夏青 , 陈国庆 ( 11 中芯国际集成电路 ( 上海) 有限公司存储器技术发展中心, 上海201203; 21 上海第二 业大学, 上海201209) : 介绍了新颖的MOS 器件结构及鳍状FET 器件研究最新进展, 比较了几种主要新颖半 导体器件的特性, 指出了MOSFET 寸缩小所面临的巨大挑战及解决办法, 展望了器件未来发展 趋势 : 金属氧化物半导体场效应管; 微电子学; 鳍状 : TN38611 : A : 1003-353X (2007) 01-0001-05 History and Perspective of MOSFET Device ( Ò) 1 2 1 XIAO De-yuan , XIA ing , CHEN Guo-qing ( 11Memory Technology Develop ment Center, Semiconductor Manuf acturing Inter national ( Shanghai) Corp oration, Shanghai 201203, China; 2. Shanghai Second Polytechnic Univer ity , Shanghai 201209, China) Abstract: The progress of thenovel MOSFET development and themost advancedMOSFET structure as well as the fin FET device structurewere introduced. Comparison on the characteristics of several new devices wasgiven, the great challenges and the solutions to the MOSFET scaling down were also described, the device developing trends were viewed. Key words: MOSFET; microelectronics; fin , 1 引言 / , , , , 12 1/ 10 , , IT IT , MOS 2 MOS 器件结构研究最新进展 211 , , 65 nm , : 1 / (PKK2005-03) January 2007 Semiconductor Technology Vol132 No 11 1 , , , 20 nm NEC , 200214 nm CMOS 3 , [1] , , ( EOT ) 1 nm, 212